2SD716 [Wing Shing]
SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION); 硅外延平面型晶体管(概述)![2SD716](http://pdffile.icpdf.com/pdf1/p00056/img/icpdf/2SD716_293282_icpdf.jpg)
型号: | 2SD716 |
厂家: | ![]() |
描述: | SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION) |
文件: | 总1页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SD716
SILICON EPITAXIAL PLANAR TRANSISTOR
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
TO-3P(I)D
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
PARAMETER
CONDITIONS
MIN
MAX
100
100
6
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
-
-
-
V
A
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
A
ICM
Ptot
VCEsat
VF
tf
-
-
-
1.5
Tmb 25
60
2
W
V
IC = 3.0A; IB = 0.3A
IF = 3.0A
2.0
-
V
Fall time
s
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
PARAMETER
CONDITIONS
MIN
MAX
100
100
5
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
VBE = 0V
-
-
V
V
-
6
A
Base current (DC)
-
-
1.5
60
A
IB
Ptot
Total power dissipation
Tmb 25
W
Storage temperature
-55
-
150
150
Tstg
Tj
Junction temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VCB=100V
MIN
-
MAX
0.2
UNIT
mA
mA
V
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
VEB=5V
-
0.2
IC=1mA
100
-
IC = 3.0A; IB = 0.3A
IC = 1A; VCE = 5V
IC = 1A; VCE = 12V
VCB = 10V
2
250
-
V
50
12
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
MHz
pF
us
150
Cc
ton
Tum-off storage time
us
ts
Fall time
us
tf
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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